Reporter 10/2/99: Department of Physics (Cavendish Laboratory)

VACANCIES

Department of Physics (Cavendish Laboratory)

TWO POSTDOCTORAL RESEARCH ASSOCIATES

Applications are invited for two posts of Postdoctoral Research Associate in MBE growth and in-situ fabrication of semiconductor nanostructures and devices in the Semiconductor Physics Research Group at the Cavendish Laboratory. The research places particular importance on the combination of thin film growth and in-situ processing. The group has extensive III-V molecular beam epitaxy (MBE) growth facilities, one of which consists of a twin growth chamber VG V80H MBE system attached to a focused ion beam lithography system, a surface decontamination system, and an STM. Currently this is being augmented by a new metals growth chamber. In addition, a large processing cleanroom allows the fabrication of samples using optical and electron beam lithography and there are extensive cryogenic facilities with temperatures as low as 25 mK and magnetic fields up to 18 T for transport measurements.

The first post (ref DAR1) will involve the use of MBE growth in combination with an in-situ gallium focused ion beam. This will continue a highly successful programme of work and will involve the development of new, submicron-patterned three dimensional semiconductor devices.

The second post (ref DAR2) will be dedicated to the development of 'spintronic' devices combining ferromagnetic metals with III-V semiconductors. This work will involve commissioning and operating a metals growth chamber attached to the semiconductor growth system described above.

Applicants, who should have Ph.D. Degrees in Physics, Electronic Engineering, or an allied discipline, are sought with experience in thin film semiconductor or metals growth, ultra high vacuum systems and instrumentation, or focused ion beams. Experience in routine characterization of semiconductors and thin films will be an advantage. Appointments will be made for two years in the first instance and the posts may, subject to the availability of funding, be renewed for a further period or periods. The salary is in the range £15,735 to £23,651 a year and is pensionable. Informal enquiries should be made to Dr D. A. Ritchie (e-mail dar11@cam.ac.uk, tel. 01223 337331) or Dr G. A. C. Jones (e-mail gaj1@cam.ac.uk, tel. 01223 337484).

Applications, including a curriculum vitae and the names of two referees, should be sent to Mrs C. A. Jost, Semiconductor Physics Group, Cavendish Laboratory, Madingley Road, Cambridge, CB3 0HE. The closing date is 31 March 1999.

The University follows an equal opportunities policy.

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